mtd: nand: samsung: Disable subpage writes on E-die NAND

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Samsung E-die SLC NAND manufactured using 21nm process (K9F1G08U0E)
does not support partial page programming, so disable subpage writes
for it. Manufacturing process is stored in lowest two bits of 5th ID
byte.

Signed-off-by: Ladislav Michl <ladis@linux-mips.org>
Signed-off-by: Boris Brezillon <boris.brezillon@free-electrons.com>

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Ladislav Michl 2018-01-09 14:19:11 +01:00 • committed by Boris Brezillon

parent 6cbefbdcec

commit 09ec417b0e

1 changed files with 17 additions and 4 deletions

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drivers/mtd/nand/nand_samsung.c

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